First-principles study of defects at <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="d1e125" altimg="si6.svg"><mml:mrow><mml:mi>Σ</mml:mi><mml:mn>3</mml:mn></mml:mrow></mml:math> grain boundaries in CuGaSe<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="d1e133" altimg="si24.svg"><mml:msub><mml:mrow /><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math>
نویسندگان
چکیده
We present a first-principles computational study of cation–Se Σ3 (112) grain boundaries in CuGaSe2. discuss the structure these boundaries, as well effect native defects and Na impurities on their electronic properties. The formation energies show that will tend to form preferentially at rather than interiors. find Ga-rich growth conditions Cu vacancies Ga antisites are mainly responsible for having equilibrium Fermi level pinned toward middle gap, resulting carrier depletion. impurity its +1 charge state contributes this. In Ga-poor conditions, other hand, comparatively too high any significant influence density or position. Thus, under give rise p-type boundary. Also, energy is lower impurities. latter fail act hole barrier preventing recombination boundary, contrast what occurs CuInSe2 boundaries. also properties bulk CuGaSe2, which we assume reflect
منابع مشابه
First-principles investigation of Mg segregation at Σ = 11(113) grain boundaries in Al
The preferred site of Mg segregation at = 11(113)grain boundaries in Al and the effects of Mg segregation on grain boundary cohesion have been investigated through first-principle pseudopotential total energy calculations. The results show that the Mg atom prefers to occupy the ‘looser’ site at the grain boundary of Al but not the ‘tighter’ site. Furthermore, on basis of the thermodynamic theor...
متن کاملFirst-principles study of point defects at a semicoherent interface
Most of the atomistic modeling of semicoherent metal-metal interfaces has so far been based on the use of semiempirical interatomic potentials. We show that key conclusions drawn from previous studies are in contradiction with more precise ab-initio calculations. In particular we find that single point defects do not delocalize, but remain compact near the interfacial plane in Cu-Nb multilayers...
متن کاملFirst-principles Study of Interfacial Boundaries in Ni–ni3al (postprint)
The width and energy of low-index interfacial boundaries (IFBs) in Ni–Ni3Al are calculated using first-principles methods for temperatures ranging from 0 to 1300 K. The low-temperature, coherent and chemically sharp (100), (110) and (111) IFBs are studied using conventional spin-polarized density functional methods. Cluster expansion methods, as implemented in the ATAT software suite, are used ...
متن کاملFirst-principles study of interfacial boundaries in Ni–Ni3Al
The width and energy of low-index interfacial boundaries (IFBs) in Ni–Ni3Al are calculated using first-principles methods for temperatures ranging from 0 to 1300 K. The low-temperature, coherent and chemically sharp (100), (110) and (111) IFBs are studied using conventional spin-polarized density functional methods. Cluster expansion methods, as implemented in the ATAT software suite, are used ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Solid State Communications
سال: 2021
ISSN: ['1879-2766', '0038-1098']
DOI: https://doi.org/10.1016/j.ssc.2021.114263